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2 For equipment with continuous flow operation
outside of a data collection plan
6-0703 (Reapproved 0218)
SEMI D44 — Specification for Reference Position of Single Substrate for Handling Off On Tool
Equipment (through reference to SEMI E78)
PV05100 - SEMI PV51 - Test Method for In-Line Characterization of Photovoltaic Silicon Wafers by Using Photoluminescence Revision:SEMI PV51-0214 - Superseded 2 For equipment with continuousMulticrystalline silicon (mc Si) wafers produced by casting and controlled solidification usually contain regions containing high grown in defect density in addition to the grain boundaries. These defects may consist of impurity elements as well as structural defects within grains such as dislocations and dislocation networks, which may impact the solar cell efficiency negatively. The defective areas are frequently close to the sidewalls and bottom of
