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SEMI MF28-0317E (Reapproved 0622)
SEMI E133-0524 (technical revision)
the CCC manufacturers
Based on data reported by Severin2 and Grove
previously published June 2000
M09100 - SEMI M91 - Test Method for Determination of Threading Screw Dislocation Density in 4H-SIC by X-Ray Topography StdPbc-0224 SEMI MF28-0317E (Reapproved 0622)Threading screw dislocations (TSDs) are detrimental to several types of electronic devices manufactured from 4H SiC. Most TSDs are transferred from a substrate into an epitaxial layer and may cause pits in the epi layer, which can be problematic for certain processing steps. The density and distribution of TSDs is a critical parameter for evaluating the wafer quality and for failure analysis of errant device structures. X ray topography (XRT) is able
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