MF172700 - SEMI MF1727 - Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers Revision:SEMI MF1727-1110 (Reapproved 0322) - Current SFQR and SFQD are well

SFQR and SFQD are well known parameters and described in detailed in SEMI MF1530

cleaved wafers can be accepted as long as it does not cause a significant drop in the sensitivity (from a quarter to a half of a wafer)

1  The purpose of this Guide is make recommendations to help assure that manufacturing equipment used for manufacturing semiconductor devices will operate reliably without failures caused by electromagnetic interference (EMI)

Wafer thickness and diameter for this Test Method is limited only by the range of microscope stage motions available

and also through the balloting process

MF172700 - SEMI MF1727 - Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers Revision:SEMI MF1727-1110 (Reapproved 0322) - Current SFQR and SFQD are wellNOTICE: This Document was reapproved with minor editorial changes. Defects induced by thermal processing of silicon wafers may adversely influence device performance and yield. These defects are influenced directly by contamination, ambient atmosphere, temperature, time at temperature, and rate of change of temperature to which the specimens are subjected. Conditions vary significantly among device manufacturing technologies. The thermal cycling