M08500 - SEMI M85 - Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry StdPbc-1012 · Ion implant equipment

·    Ion implant equipment

if uniformly applied

This Test Method is intended for rapid carrier density determination when extended sample preparation time or high temperature processing of the wafer is not practical

1-0414 — Specification for SOAP Binding for Equipment Self Description (EqSD)

1-0708 (Reapproved 0413)

M08500 - SEMI M85 - Guide for the Measurement of Trace Metal Contamination on Silicon Wafer Surface by Inductively Coupled Plasma Mass Spectrometry StdPbc-1012 · Ion implant equipmentReduction of surface metal contamination below a concentration in accordance with the ITRS road map is a key issue for silicon wafer quality for most of the leading edge technology applications. This Document provides a guide for a high sensitivity measurement of trace metal contamination on the surface of a semiconductor grade silicon wafer by using inductively coupled plasma mass spectrometry (ICP MS). This Guide describes the procedure for trace