M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers Revision:SEMI M61-0612 (Reapproved 0319) - Superseded SEMI E134-0624 (technical revision)

SEMI E134-0624 (technical revision)

11-0316 (Reapproved 0721)

This Test Method should only be used for comparing the thermal characteristics of plastic packages in the same fluid bath system due to the thermophysical properties of the heat transfer fluids used and the effects of the variable nature of the fluid-stirring and package-mounting procedures

in these test methods

Two methods for evaluating particle contribution are provided

M06100 - SEMI M61 - Specification for Silicon Epitaxial Wafers with Buried Layers Revision:SEMI M61-0612 (Reapproved 0319) - Superseded SEMI E134-0624 (technical revision)This Specification defines the properties of silicon epitaxial wafers with buried layers that relate to the characteristics of photolithography, buried layer, and buried layer pattern after the deposition of the epitaxial layer. This Specification is intended to be used with the polished wafer specification (SEMI M1) and the epitaxial wafer specification (SEMI M2), which define the properties of the substrate and the epitaxial layer, respectively.